Effect of low level diode laser on dental implant stability

Effect of 810 nanometer (nm) low level diode laser irradiation on dental implant stability in posterior mandibular region .

Status

Active, not recruiting

Phases

Unknown

Study type

Interventional

Source

IRCT

Registry ID

IRCT20180407039212N1

Enrollment

Registered

2018-05-16

Start date

2017-06-27

Completion date

Unknown

Last updated

2018-06-18

For informational purposes only — not medical advice. Sourced from public registries and may not reflect the latest updates. Terms

Conditions

Dental implant stability. Complete loss of teeth

Interventions

Intervention 1: Intervention group:In the group, diode laser 810( nm) (QuickLase, England) was erradiation by tissue probe from the buccal and lingual sides in contact without mucosa (40mw in 4 s

Eligibility

Sex/Gender

All

Inclusion criteria

Inclusion criteria: Need for posterior implant on the mandibular sides Sufficient bone volume to receive implant without requiring bone augmentation(reconstruction)procedure in subject area

Exclusion criteria

Exclusion criteria: Pregnancy Smoking habits History of previous tooth extraction in the last six months in the selected area System disease that effects osseointegration Anticoagulant therapy Systemic glucocorticoid therapy History of radiotherapy in the craniofacial region Acute infection in the mouth, uncontrolled or untreated periodontal disease Patients without good oral hygiene

Design outcomes

Primary

Measure	Time frame
Implant stability. Timepoint: Immediately after surgery and after 1, 3, 5 and 6 weeks. Method of measurement: Resonance Frequency Analysis (RFA).	—

Countries

Iran (Islamic Republic of)

Contacts

Public ContactAzar Fazaeli

Ahvaz University of Medical Sciences

azar.fazaeli@gmail.com+98 61 3320 5170

Outcome results

None listed

Source: IRCT (via WHO ICTRP) · Data processed: Feb 4, 2026